Aufbau/Content: IC (8 Trans., 8 Widerst., 8 Dioden); Form/Case/Outline: SIP-10 (µPA1428[A]H); Application/Type: NPN Silicon Power Darlington Transistor Array for High Speed Switching; Daten/electr.data: Each (of four) = Umax(Ucb): 60 V; IC max: 2 A; Pd: <3.5 W; hfe 1: >2000; U S: 1 V; Tmax j: 150 °C. -
