Aufbau/Content: IC (1 NPN Photo-Transistor, 1 Gallium-Arsenid-Diode); Form/Case/Outline: DIP-4 (PS2581AL1) | SMD (PS2581AL2); Application/Type: Long Creepage High Isolation Voltage 4-Pin Photocoupler; Daten/electr.data: Vceo: 70 V; Viso: 5000 V; Ic: 30 mA, Pd: 150 mW; t amb:-55...100 °C. -