BZY23

Material/Aufbau/Pol.: Silicon Reference Diode (Zener-Diode Combination);
Form/Case: Similar to quarz crystal enclosure HC-33/U;
Daten/electr.data: U_z = 8,4 ± 0,4 V @ I_z = 5 mA;

Temperature coefficient of breakdown voltage @ I_z = 5 ± 0,5 mA: TK_u < ± 5 x 10^-5 /grad:

The silicon reference diodes BZY22, BZY23, BZY24 and BZY25 differ only by the magnitude of their breakdown voltage temperature coefficient:

BZY22 TK_u < ± 10 x 10^-5 / grad; BZY23 TK_u < ± 5 x 10^-5 / grad;

BZY24 TK_u < ± 2 x 10^-5 / grad; BZY25 TK_u < ± 1 x 10^-5 / grad.