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KSA539

Information - Help 
ID = 76382
       
Country:
South Korea
Brand: Samsung Co.; Daegu
Tube type:  Transistor   Universal 
Identical to KSA539

Base Wires
Filament Solid State
Description

Material/Aufbau/Pol.: Silizium Epitaxial Planar PNP;
Form/Case/Outline: TO-92 Anschlussfolge CBE;
Daten/electr.data: I F: 50 mA; U F: (-5) V; U S: <0.4 V; Isp: <0.1 µA; ß (beta): 40-400*; N: 400 mW; Imax(Ic): 200 mA; Umax(Ucb): -60 V; Umax(Uce): -45 V; f g(FT): >100 MHz; tmax j: 150 °C; kompl.: KSC815.
Variante: KSA539-R = 40-80*, KSA539-O = 70-140*, KSA539-Y = 120-240*, KSA539-G = 200-400* (beta-Gruppen).
-

 
Dimensions (WHD)
incl. pins / tip
5 x 5 x 4 mm / 0.20 x 0.20 x 0.16 inch
Weight 1 g / 0.04 oz
Information source -- Original-techn. papers.   
 
to_92_cbe~~106.png
KSA539: TVT 1969 Verlag Nolde Dachau
Günther Stabe

 

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