Aufbau/Content: N-Kanal MOS-FET + 2 Dioden; Form/Case/Outline: SIP-8 (µPA1725G); Application/Type: Switching N-Channel Power MOSFET for Power Management Applications in Notebooks, and the like; Daten/electr.data: Vdss: <20 V; Vgss max: +/- 12 V; Id max: +/- 7 A; Idss: <10 µA; Igss: <+/-10 µA; td(on): 30 ns; Rds(on): <30 mΩ; Pt: <2 W; t max j: 150 °C; -
