Aufbau/internal: IC (8 Trans., 8 Widerst., 2 Dioden); Form/Case/Outline: TO-99-6 (S.FC 2861xM|C) | DIP-8 (S.FC 2861xDC); Typ/Application: High Voltage Operational Amplifier; Daten/electr.data: Ub max: +/- 50 V; Ib max: 70 mA; N: <500 mW; t op: DIP-8 = 0...70 °C, TO-99-6 (M) = -55...+125 °C; -