Texas Instruments 3N35 specifications

Per the TI website:

Type Designator: 3N35
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 1.5 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO12

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