Radio-Katalog, Röhren, Halbleiter etc.
1N23WE
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Land:
USA
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| Identisch mit |
1N23WE
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| Ähnliche |
Grenzwerte anders:
1N23E
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| Sockel |
Kein Sockel
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| Beschreibung |
Silicon, point-contact mixer diode, NF 7.5 dB at 9.37GHz. 2 Erg burnout capability.
Double ended: the large contact ring may be placed either on the cathode or on the anode terminal. M suffix stays for matched pair.
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| Literatur |
- - Manufacturers Literature Sylvania Microwave Crystal Diodes
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1N23WE: Manufacturer's Literature
Emilio Ciardiello
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Sammlung von
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[rmxtube-ge, noindex]
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Mehr Informationen |
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