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1N23WE

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ID = 34098
       
Country:
United States of America (USA)
Brand: Common type USA tube/semicond.
Tube type:  SEMICONDUCTOR, general   Frequency converter 
Identical to 1N23WE
Similar Tubes
Different maximum ratings:
  1N23E

Base No base
Description Silicon, point-contact mixer diode, NF 7.5 dB at 9.37GHz. 2 Erg burnout capability.
Double ended: the large contact ring may be placed either on the cathode or on the anode terminal. M suffix stays for matched pair. 
Information source - - Manufacturers Literature   Sylvania Microwave Crystal Diodes

1n21pin_3.png 1N23WE: Manufacturer's Literature
Emilio Ciardiello

Collection of

 
1n23we.jpg

1N23WE
 

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