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ID = 39226
United States of America (USA)
Brand: General Electric Co. (GE); Bridgeport CT, Syracuse NY
Tube type:  Transistor   RF/IF-Stage 
Identical to 2N170
Similar Tubes
Normally replaceable-slightly different:

Base Wires
Filament Solid State

Material/Aufbau/Pol.: Germanium (rate-grown) Flächen NPN;
Form/Case/Outline: ~ TO-22 / O-17 / R-163;
Daten/ I F: 1 mA; U F: _ V; Isp: 5 µA; ß (beta): 32; N: 30 mW; Imax(Ic): 20 mA; Umax(Uce): 6 V; f g(FT): 5 MHz; tmax j: 85 °C.

Dimensions (WHD)
incl. pins / tip
13 x 9 x 6 mm / 0.51 x 0.35 x 0.24 inch
Weight 2 g / 0.07 oz
Information source -- Collector info (Sammler)   KTT 1969/70, Towers IVT
2N170: F.H.
Anonymous 88 Collector

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2N170: TTT Steidle 1981
Günther Stabe † 19.8.20

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Collection of a member from D

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