Material/Aufbau/Pol.: Dual Gate N-Kanal MOSFET; Form/Case: TO-72 Anschlussfolge D-G2-G1-S/Case; Daten/electr.data: I dss: 6...30 mA; Isp: <10 nA; ß (beta): 10-22; N: 360 mW; Imax: 50 mA; Umax: 25 V; f g(FT): 200 MHz; tmax j: 150 °C. Manufactured by RCA and Texas Instruments; similar to NTE222 from NTE (USA). -