BZY71

Material/Aufbau/Pol.: Silicon Reference Diode (Zener-Diode Combination);
Form/Case: Special;
Daten/electr.data: U_z = 8,1 ± 0,2 V @ I_z = 100 mA; Ptot = 1 W;

Temperature coefficient of breakdown voltage @ I_z = 100 ± 5 mA: TK_u < ± 1 x 10^-5 /grad:

The silicon reference diodes BZY70, and BZY71 differ only marginally with respect to their Zener voltage tolerance values and by the magnitude of their breakdown voltage temperature coefficient:

BZY70^_: U_z = 8,1 ± 0,4 V; TK_u < ± 2 x 10^-5 / grad; BZY71: U_z = 8,1 ± 0,2 V; TK_u < ± 1 x 10^-5 / grad.