Aufbau/Content: IC (1 NPN-Si-Trans., 1 GaAs-Diode); Form/Case/Outline: DIP-6 (CQY80NG); Type/Application: Phototransistor Optocoupler; Daten/electr.data: V F: 1.2 V; I F: <60 mA; I r: 10 nA; Vr: 5 V; Pd: <250 mW; Umax(Uce): 32 V; -