Material/Aufbau/Pol.: N-Kanal Power D-MOSFET, Enhancement Mode; Form/Case/Outline: D²PAK (FDB33N25TM) Anschlussfolge GDS; Daten/electr.data: N: 235 W; Id max: 33 A; Vdss: 250 V; Vgs: +/- 30 V; Rds(on): 0.094 Ω; tmax j: 150 °C. High-voltage High-speed switching applications; -
