Aufbau/Content: IC (8 Trans., 4 Widerst., 12 Dioden); Form/Case/Outline: SIL-12-K (FT5754M); Type/Application: Silicon Darlington Transistor Array: 2 + 2 devices; Daten/electr.data: I F: 200 mA; U S: 1.2 V; Umax(Ucb): 150 V; Umax(Uce): 100 V; Imax(Ic): 3 A; I sp: <10 µA; hfe: 2000-15000; Pd: 33 W; t on: 0.6 µs; t max j: 150 °C; Diode V R: 110 V; Diode I FM: 3 A;Ähnlich/similar: FT5757M = 4 device independent; Manufactured by Fujitsu (J) -
