Material/Aufbau/Pol.: Silizium N-Kanal Power MOS-FET, Enhancement mode, Avalanche rugged; Form/Case/Outline: TO-220 (IRF630[A]) | TO-220F-Iso (IRFS630) | D²PAK (IRFW630B) | I²PAK (IRFI630B) Anschlussfolge GDS; Daten/electr.data: Vdss: 200 V; Vgss: +/- 30 V; Vgs(th): 2...4 V; Id: 9 A; Idss: <10 µA; Igss: <100 nA; Rds(on): <0.4 Ω; Pd: 72 W; tf: <140 ns; tmax j: 150 °C. Ähnlich/similar: [YT]F630 (Toshiba), SIHF630 (Vishay), UF630 (UTC), CEBF630 (CET), ... -
