Material/Aufbau/Pol.: Silizium N-Kanal Power MOS-FET, Enhancement mode; Form/Case/Outline: TO-220-Iso Anschlussfolge GDS; Daten/electr.data: Vd: 500 V; Id: 4.6 A (pulsed: 18 A); Vgs: +/- 20 V; Vgs(th): 2...4 V; Idss: <25 µA; Igss: <0.1 µA; Pd: 40 W; Rds(on): 0.85 Ω; td(on): 14 ns; tmax j: 150 °C. -
