Catalogue de radios anciennes
K6T1008C2E
Pays:
Corée du Sud
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Identique à |
K6T1008C2E
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Culot |
Semiconductor housing
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Description |
Aufbau/Content: IC (CMOS LSI);
Form/Case/Outline: DIP32 | SOP-32 | TSOP32 | TSOP-32 (Reverse);
Applikation/Type: 128k x 8Bit Low Power SRAM (static);
Daten/electr.data: VCC: 4.5...5.5V; Data Retension Voltage: 2V; TOP: 0...70°C (L, B), TOP: -40...85°C (P, F).
Manufactured by Samsung -
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Bibliographie |
-- Original-techn. papers. Samsung
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K6T1008C2E: Peter Pfeiffer
Peter Pfeiffer
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Collection de
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Mentions légales |
Plus d'informations |
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