Aufbau/Content: IC (__ Trans., __ Widerst., __ Dioden); Form/Case/Outline: SIL-12-K; Type/Application: Dual AF Power Amplifier 2x 5.5 W @ 4 Ω for car radios; Daten/electr.data: Vcc: 13.2 V; Iccq: 75 mA; Voltage gain: 51.5 dB; THD: 0.15 %; Ri: 30 kΩ; I out peak: <3.5 A; Pd: <15 W; t op: -20...+75 °C.
Manufactured by Samsung (S-Korea). -
