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KSC839

Information - Help 
ID = 56741
       
Country:
South Korea
Brand: Common type South Korea tube/semicond.
Tube type:  Transistor   RF/IF-Stage 
Identical to KSC839
Similar Tubes
Normally replaceable-slightly different:
  2SC839 ; BF241 ; BF255

Base Wires
Filament Solid State
Description Material of transistor : Si, Process: epitaxial Polarity : npn
Maximum collector power dissipation (Pc) : 250mW
Maximum collector-base voltage (Ucb) : 35V
Maximum collector-emitter voltage (Uce) : 30V
Maximum emitter-base voltage (Ueb) : 4V
Maximum collector current (Ic max) : 100mA
Maximum junction temperature (Tj) : 150°C
Transition frequency (ft) : 80MHz
Collector capacitance (Cc), pF : 2
Forward current transfer ratio (hFE), min/max : 40/140
Manufacturer : SAMSUNG, second source : Fairchild
Package : TO-92
Application : Low Power, General Purpose
Variants: KSC839-G (green) = 200/400*, KSC839-O (orange) = 70/140*, KSC839-R (red) = 40/80*, KSC839-Y (yellow) = 120/240*, (beta/hfe);
 
Dimensions (WHD)
incl. pins / tip
5 x 5 x 4 mm / 0.20 x 0.20 x 0.16 inch
Weight 1 g / 0.04 oz
Literature -- Collector info (Sammler)   
 
to_92_cbe~~4.gif
KSC839: TVT 1969 Verlag Nolde Dachau
Günther Stabe

 

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