Aufbau/Content: IC (20 Trans., 19 Widerst., 13 Dioden); Form/Case/Outline: SIP-10H; Type/Application: AF Power Amplifier 3.5 W @ 8 Ω (16 V); Daten/electr.data: Vcc max: 22 V (typ.: 16 V); Iccq: 28 mA; Icc max: 1.4 A; Pd max: 5 W; THD: 0.3 %; Rin: 100 kΩ; t op: -20...+75 °C. -