Aufbau/Content: IC (__ Trans., __ Widerst., __ Dioden); Form/Case/Outline: SIP-10-H; Type/Application: Dual-Channel AF Power Amplifier 2x 6 W @ 8 Ω (25 V); Daten/electr.data: Vcc: 10...32 V (typ.: 25 V); Iccq: 45 mA; Pd max: <20 W; THD: 0.1 %; t op: -20...+75 °C. -