Aufbau/Content: IC (>16 Trans., >4 Widerst., >4 Dioden); Form/Case/Outline: SIL-11-H; Type/Application: Dual AF power Amp 2 x 2.5 W @ 4 Ohms / Mono Bridge 9 Watt @ 8 Ohms; Daten/electr.data: Vcc: 6-15 V, max: 18 V; Io: __ mA; Klirrfaktor/Dist.: <10 %; T op: 0...70 °C; . Varianten: LM1896 = DIP-141, 2 x 1 W / 1 x 2 W Bridge, Umax: 12 V. Manufactured by National Semiconductor Corp. (USA) -
