Aufbau/Content: IC (GaAs IR-Diode + Photo Darlington Transistor NPN); Form/Case/Outline: DIP-4 (LTV815[M]) | SOP-4 (LTV815S); Application/Type: High Density Mounting Type Photocoupler, CTR min. 600 %; Daten/electr.data: IF max: 50 mA; Pd max: 70 mW; Vceo max: 35 V; Veco max: 6 V; Ic max: 80 mA; Pc max: 150 mW; VF: 1.4 V; U S: <1 V; Ptot: 200 mW; t op: -30...+100 °C;Variante: LTV825 = two channels, LTV845 = four channels; Manufactured by Lite-On Technology Corp. -
