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NTB18N06L

Information - Help 
ID = 78625
       
Country:
United States of America (USA)
Brand: Common type USA tube/semicond.
Tube type:  Transistor   Power/Output 
Identical to NTB18N06L

Base Wires
Description

Material/Aufbau/Pol.: Silizium N-Kanal Power MOS-FET, Logic Level;
Form/Case/Outline: TO-220 (NTP18L06L[G]) | D²PAK (NTB18N06L[G]) Anschlussfolge GDS;
Daten/electr.data: Vgs: +/- 10 V; Idss: <1 µA; Igss: <100 nA; Vgs(th): 1...2 V; Pd: 48.4 W; Id: 15 A; Vdss: 60 V; Rds(on): 0.1 Ω; tmax j: 175 °C.
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Dimensions (WHD)
incl. pins / tip
10 x 15 x 3 mm / 0.39 x 0.59 x 0.12 inch
Weight 1 g / 0.04 oz
Information source - - Manufacturers Literature   ON Semiconductor

ntb18n06l_s.png NTB18N06L: ON
Günther Stabe † 19.8.20

ntb18n06l_innen.png
NTB18N06L: ON
Günther Stabe † 19.8.20

Collection of

 
ntb18n06l.jpg

 

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