Aufbau/Content: IC (8 Trans., 8 Widerst., 4 Dioden); Form/Case/Outline: SIP-10 (µPA1436[A]H); Application/Type: NPN Silicon Quad Power Darlington Transistor Array for Low Speed Switching; Daten/electr.data: Each (of four) = Umax(Ucb): 150 V; Umax(Uce): 100 V; IC max: 3 A; Pd: <3.5 W; hfe 2: 2'000...20'000; U S: 0.9 V; Tmax j: 150 °C; kompl.: µPA1437[A]H. -
