RD30EB

Material/Aufbau: Silizium DHD* Zener-Diode;
Form/Case/Outline: DO-35 (RD30EBn**);
Daten/electr.data: I F: 200 mA; U F: __ V; I sp: 0.2 µA (120... 0.2 µA*); U sp: __ V; N: 500 mW; Iz max: 5 mA (20...1 mA*) ; Uz: 30 V*; tmax j: 175 °C; Toleranz: __**;
**) RD30EB = 26.77 ... 30.51 V; RD30EB1 = 26.99 ... 28.39 V; RD30EB2 = 27.7 ... 29.13 V; RD30EB3 = 28.36 ... 29.82 V; RD30EB4 = 29.02 ... 30.51 V;
Family: RD2.0EB[x] ... RD200EB[x] = 2.0 ... 200 V*; ~B, ~B1 ... ~B7 = max. 8 Toleranzbereiche pro Typ;
*) DHD = Double Heatsink Diode;
Ähnlich/similar: BZX79Cxx;
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