Aufbau/Content: IC (__ Trans., __ Widerst., __ Dioden, __ Kond.); Form/Case: SIP-10-H; Applikation/Type: Vertical Deflection Circuit; Daten/electr.data: Vs: 10...30 V; Is: 315 mA; I o peak: 6 A; Ptot: <9 W; tmax js: 145 °C. -