Aufbau/Content: IC (1 NPN Photo-Darlington-Transistor + Diode u. Widerstand, 1 Gallium-Arsenid Infrared Diode); Form/Case: DIP-4; Applikation/Type: Opto-Coupler; Daten/electr.data: Vcc: <200 V; V F: <1.15 V; I F: 16 mA; Ir: <10 µA; Ic: <120 mA; Pd: <100 mW; t op: -25...+85 °C. Variants: TLP627-2 = dual opto coupler DIP-8; TLP627-4 = quad opto coupler DIP-16 -
