Aufbau/Content: IC (GaAs IRED + Photo Transistor); Form/Case/Outline: DIP-6 | SOP-6; Applikation/Type: Opto-Coupler; Daten/electr.data: LED: If: 60 mA; Vr: 5 V; I fp: 1A; V f: 1.15 V; Ir: <10 µA; tmax j: 125 °C; Detector(Transistor): U S: 0.2 V; Umax(Ucb): 80 V; Umax(Uce): 55 V; Ic max: 50 mA; Pc: 150 mW; tmax j: 125 °; Total Package: PT: 250 MW; CCTR: 100...600 %; Ähnlich/similar: TLP634 - without Base connector (Toshiba) -
