Aufbau/internal: IC (9 Trans., 12 Widerst., 3 Dioden); Form/Case/Outline: TO-3 9 Pins; Type/Application: AF medium 5 W Power Amplifier; Daten/electr.data: Ri: 8 kOhm; Ro: 8 Ohm; Vcc: 8...27 V; Iccq: 25 mA; Io: <1.5 A; Pd: <6.5 W; Dist.: 0.3 %; tmax amb: -25...+70 °C; Manufactured by UNITRA Cemi (Poland) -
