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SPB21N50

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ID = 88408
       
Country:
Germany
Brand: Siemens (& Halske, -Schuckert Werke SSW, Electrogeräte); Berlin, München
Tube type:  Transistor   Universal 
Identical to SPB21N50
Base Wires
Description

Material/Aufbau/Pol.: Silizium N-Kanal Power MOS-FET;
Form/Case/Outline:TO-263;
Daten/electr.data: VDS: 560V; ID: 21A; RDS(on): 0.19Ω; Tj: -55...140°C.
Manufacturer: Infineon
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Information source - - Manufacturers Literature   Infineon
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SPB21N50: Datasheet
Egon Strampe

Collection of

Egon Strampe (D)
 
spb21n50.jpg

 
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