Material/Aufbau/Pol.: Silizium diff. Diode; Form/Case: ~ DO-7; Daten/electr.data: I F: 100 mA; U F: 1 V; Isp: 0.1 µA; Usp: 1500 V; N: 250 mW; Imax: 100 mA; Umax: 1500 V; 1 µs; 1.2 pF; tmax j: 150 °C. -