Material/Aufbau/Pol.: Silizium Planar NPN; Form/Case/Outline: SOT-9; Daten/electr.data: I F: 500 mA; U F: 2 V; Isp: 0.1 µA; ß (beta): 50-150*; N: 11.5 W; Imax (Ic): 2.5 A; Umax (Uce): 64 V; f g(FT): (100) MHz, tmax j: 175 °C. Varianten: BDY16-A = 50-150*, BDY16-B = 100-300* (beta/hfe-Gruppen) -
