Material/Aufbau/Pol.: Silizium multi-epitaxial Mesa NPN; Form/Case/Outline: TO-3; Daten/electr.data: I F: 1.2 A; U S: <1.5 V; Isp: <1 mA; ß (beta): 30; N: 100 W; Imax(Ic): 15 A; Umax(Ucb): 1000 V; Umax(Uce): 450 V; f g(FT): 6 MHz; tmax j: 150 °C. -