| Descripción |
Aufbau/Content: IC (1 NPN - Si - Photo-Transistor, 1 Gallium-Arsenid-IR-Diode);
Form/Case/Outline: Drahtenden (wires);
Applikation/Type: Optokoppler (photocoupler);
Daten/electr.data: Ic/If: > 0,25 @ VCE: 5 V, If: 5 mA; VCEsat: < 0,4 @ If: 8 mA, Ic: 2 mA; Vr,diode < 2 V; VCE0,transistor < 50 V; If,diode: <30 mA; Ptot,diode: 50 mW; Ptot,transistor: 200 mW; tr,typ: 5 μs, tf,typ: 5 μs;
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