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OC818

Information - Help 
ID = 43170
       
Country:
Germany
Brand: Halbleiterwerk Frankfurt /Oder, VEB, (HFO); Frankfurt /Oder (Ostd.)
Developer: Werk für Bauelemente der Nachrichtentechnik (WBN), Teltow, VEB, RFT (Ostd.) - vorm. DRALOWID 
Tube type:  Transistor   Audio Frequency 
Identical to OC818
Similar Tubes
Different maximum ratings:
  OC816 ; OC817
Successor Tubes OC827  

Base Wires
Filament Solid State
Description Material/Aufbau/Pol.: Germanium Fläche PNP;
Form/Case: TO-22 (später auch in TO-18-L);
Daten/electr.data: I F: 2 mA; U F: 6 V; Isp: 15 µA; ß (beta): 20-100; N: 50 mW; Imax(Ic): 20 mA; Umax(Uce): -15 V; f g(FT): 0.3 MHz; tmax: 75 °C.
Später in HWF (Halbleiterwerk Frankfurt/Oder) gebaut.
Auf extra geringes Rauschen ausgesuchte Ausführung des OC816 (F<5db) - 
Information source
 
to22_ktt_23.gif
OC818: KTT 1969/70
Günther Stabe † 19.8.20

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