Aufbau/Content: IC (BiCMOS); Form/Case/Outline: DIP-8 (SA630N) | SOP-8 (SA630D); Applikation/Type: Single pole double throw (SPDT) switch; Daten/electr.data: Vcc: 3 ... 5.5 V; Icc: <0.3 mA; Pd: <1.16 W; t op: -40...+85 °C. Developed by SIGNETICS (USA)-