Aufbau/Content: IC (1 Si-NPN-Photo-Trans., 1 GaAs-Diode); Form/Case/Outline: DIP-4; Type/Application: Optocoupler; Data: Diode: IF: 1.25 V, Vbr: 30 V; Ir: 10 nA; Trans.: Vsat: 0.25 V; CTR: 40...320 %, td(on): 3...6 µs (grouped using 4 suffices ~-1 ... ~4). -
