| Descripción |
Aufbau/Content: IC (__ Trans., __ Widerst., __ Dioden, __ Kond.);
Form/Case/Outline: DIP-18 ([TMS]4C1024-xx);
Applikation/Type: 1 M x 1 Dynamic RAM (DRAM);
Daten/electr.data: Vcc: __ V; Icc: __ mA; Pd: __ mW; t op: -__...+__ °C.
Ähnlich/similar: MB81C1000 (Fujitsu), GM71C1000 (Goldstar), HM511000 (Hitachi), HY531000 (Hyundai), MT4C1024 (Micron), M5M41000 (Mitsubishi) , MCM511000 (Motorola), µPD421000 (NEC), M5M511000 (OKI), KM41C1000 (Samsung), ...
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