ZT41

General Purpose Surface Passivated Transistor

Material/Aufbau/Pol.: Silicon Planar PNP
Form/Case/Outline: TO-18 SO-12A Connection sequence from tab: EBC
Daten/electr.data with : I_C 10mA and V_CE 6V; at 25^oC

V_sat <0.5V, 0.35V typical; I_CB0 <0.5µA, 0.05 µA typical;

ß (beta) (or h_FE) : 38-82; P_max: 300mW; I_max(I_c): 50 mA; Tj_max : 150°C;

V_max(V_cb0): -20V; V_max(V_ce0): -20 V; f_T: >70 MHz;