Aufbau/Content: IC (N-Channel Vertical Power FET, CMOS compatible input, SIPMOS Technology); Form/Case/Outline: Pentawatt (BTS412B2); Type/Application: Smart High Side Power Switch (PROFET); Daten/electr.data: Vbb: 4.7 ... 42 V; I L: 1.8 A; R on: 0.22 Ω; Ri: 9 kΩ; Ptot: 50 mW; t op: -40...+150 °C.
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