Antique radios, Old Time Radios
PJD09N03
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Country:
Germany
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| Identical to |
PJD09N03
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| Base |
Wires
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| Description |
Material/Aufbau/Pol.: Silizium N-Kanal OptiMOS°2 Power MOS-FET, Anreicherungstyp;
Form/Case/Outline: TO-252;
Daten/electr.data: Vdss: 25 V; Vgs: +/- 20 V; Vgs(th): 1.2 ... 2.0 V; Id: 30 A; Idss: 0.1 µA; Igss: < 0.1 mA; Pd: 83 W; Rds(on): < 9mΩ; Tj: 175 °C.
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Dimensions (WHD)
incl. pins / tip |
7 x 8 x 3 mm / 0.28 x 0.31 x 0.12 inch |
| Weight |
1 g / 0.04 oz |
| Information source |
- - Manufacturers Literature Infineon
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PJD09N03: Datasheet
Egon Strampe
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Collection of
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